BEIJING, Jan. 23 (Xinhua) -- Chinese researchers recently made a breakthrough in ferroelectric materials that promises to dramatically increase information storage density.

The research team from the Institute of Physics at the Chinese Academy of Sciences, successfully identified one-dimensional charged domain walls within a fluorite-structured ferroelectric material.

These walls are tiny, with both thickness and width measuring just a few hundred-thousandths of the diameter of a human hair. This discovery, notably, provides a scientific basis for developing next-generation ultra-high-density devices.

Their findings were on Friday published in the journal Science.